不同盐分条件下硅对两个高羊茅品种生物量分配和营养元素氮、磷、钾吸收利用的影响

doi:10.11686/cyxb2021121

摘要/Abstract

摘要：

频繁的灌溉，使人工草地的高羊茅生长在盐渍化或潜在盐渍化环境中。硅可以抑制植物对Na⁺的吸收，增加对N、P和K⁺的吸收，从而提高植物的耐盐性，且这种影响因植物种类和品种的不同而不同。本研究采用盆栽试验，研究了不同程度盐生境下施硅对两个高羊茅品种（抗性弱的K31和抗性强的XD）生物量和植株N、P、K⁺、Na⁺含量的影响。结果表明，随着盐浓度的增加，两个高羊茅品种地上和地下生物量、N、P、K⁺含量降低，Na⁺含量增加。施硅对地上和地下生物量、N、P、K⁺、Na⁺含量的影响与盐浓度有关，在中低盐浓度下，施硅增加了高羊茅的地上、地下生物量、根冠比、N、P、K⁺含量、K⁺/ Na⁺ 值，降低了Na⁺含量。高盐浓度时，施硅对高羊茅的生物量和N、P、K⁺、Na⁺含量没有影响。施硅对两个高羊茅品种地上和地下生物量、Na⁺、P含量的影响相似，对K⁺、N含量的影响不同，硅对耐盐性较强的XD地上部K⁺及N含量的有利影响优于耐盐性较弱的K31。结果表明，在低中盐浓度条件下，施硅可以促进高羊茅的生长，并且对耐盐性较强的高羊茅品种XD更为有利。

关键词: 高羊茅, 硅的应用, 生物量, N、P、K吸收, 盐浓度

Abstract:

In many areas where tall fescue is cultivated， soils are salinized or may become salinized because of frequent irrigation. The application of silicon （Si） can improve the salt tolerance of plants by reducing the absorption of sodium and increasing the absorption of nitrogen， phosphorus， and potassium， although the extent to which Si improves salt tolerance varies among plant species and varieties. In this study， pot experiments were conducted to investigate the effects of Si application on the biomass of two tall fescue （Festuca arundinacea） cultivars （K31 and XD） under salt stress and on the N， P， K⁺， and Na⁺concentrations in their shoots and roots. The two cultivars differed in their salt tolerance； K31 was salt-sensitive while XD was highly salt-resistant. The two cultivars were grown in a mixture of vermiculite and perlite with a range of salinities. As the salinity increased， the shoot and root biomass decreased， the N， P， and K⁺ concentrations in the shoots and roots of the two cultivars decreased， and the Na⁺ concentrations increased. These negative effects of salinity were ameliorated by Si， and to a greater extent in the salt-tolerant cultivar than in the salt-sensitive cultivar. The application of Si increased shoot and root biomass， the root∶shoot， N， P， K⁺ concentrations， and the K⁺∶Na⁺， and decreased Na⁺ concentrations in the shoots and roots of both tall fescue cultivars in medium- and low-salinity treatments. However， Si application did not affect these parameters in the high-salinity treatments because the salinity level exceeded the degree of salt tolerance and Si was not able to regulate plant responses. The application of Si had a similar effect on shoot and root biomass and on Na⁺ and P concentrations in the two cultivars， but different effects on K⁺ and N concentrations. The beneficial effects of Si on K⁺ and N concentrations in shoots of salt-stressed plants were stronger in the salt-tolerant cultivar XD than in the salt-sensitive cultivar K31. These results indicate that Si can promote the growth of tall fescue under low and medium salinities， and is especially effective for salt-tolerant tall fescue cultivars.

Key words: tall fescue, Si application, biomass, N， P and K uptake, salinity

陈文瑞, 蒋朝, 周齐新, 王云琴, 李春鸣, 郭鹏辉, 刘慧霞. 不同盐分条件下硅对两个高羊茅品种生物量分配和营养元素氮、磷、钾吸收利用的影响[J]. 草业学报, 2022, 31(5): 51-60.

Wen-rui CHEN, Zhao JIANG, Qi-xin ZHOU, Yun-qin WANG, column:LI Chun-ming, Peng-hui GUO, Hui-xia LIU. Effects of silicon on biomass allocation and uptake and utilization of nitrogen， phosphorus， and potassium in two tall fescue （Festuca arundinacea） cultivars under different salinity conditions[J]. Acta Prataculturae Sinica, 2022, 31(5): 51-60.

图/表 7

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变异来源 Source of variation	SDW	RDW	R/S	地上部Shoots					地下部Roots
变异来源 Source of variation	SDW	RDW	R/S	磷P	钾K⁺	氮N	钠Na⁺	K⁺/Na⁺	磷P	钾K⁺	氮N	钠Na⁺	K⁺/Na⁺
品种Cultivar	0.014	0.000	0.000	0.144	0.000	0.000	0.034	0.000	0.000	0.000	0.000	0.000	0.000
盐浓度Salinity	0.000	0.000	0.005	0.000	0.000	0.000	0.000	0.000	0.000	0.000	0.000	0.000	0.000
硅处理Si	0.000	0.000	0.000	0.000	0.000	0.000	0.000	0.000	0.000	0.000	0.000	0.000	0.000
品种×盐浓度Cultivar×salinity	0.015	0.000	0.003	0.000	0.002	0.367	0.012	0.000	0.584	0.000	0.000	0.000	0.000
品种×硅Cultivar×Si	0.320	0.074	0.163	0.310	0.598	0.960	0.485	0.015	0.759	0.000	0.703	0.014	0.663
盐浓度×硅Salinity×Si	0.000	0.000	0.207	0.000	0.201	0.032	0.000	0.000	0.047	0.002	0.000	0.000	0.006
品种×盐浓度×硅Cultivar×salinity×Si	0.034	0.003	0.146	0.049	0.472	0.260	0.807	0.090	0.559	0.002	0.129	0.316	0.544

变异来源 Source of variation	SDW	RDW	R/S	地上部Shoots					地下部Roots
变异来源 Source of variation	SDW	RDW	R/S	磷P	钾K⁺	氮N	钠Na⁺	K⁺/Na⁺	磷P	钾K⁺	氮N	钠Na⁺	K⁺/Na⁺
品种Cultivar	0.014	0.000	0.000	0.144	0.000	0.000	0.034	0.000	0.000	0.000	0.000	0.000	0.000
盐浓度Salinity	0.000	0.000	0.005	0.000	0.000	0.000	0.000	0.000	0.000	0.000	0.000	0.000	0.000
硅处理Si	0.000	0.000	0.000	0.000	0.000	0.000	0.000	0.000	0.000	0.000	0.000	0.000	0.000
品种×盐浓度Cultivar×salinity	0.015	0.000	0.003	0.000	0.002	0.367	0.012	0.000	0.584	0.000	0.000	0.000	0.000
品种×硅Cultivar×Si	0.320	0.074	0.163	0.310	0.598	0.960	0.485	0.015	0.759	0.000	0.703	0.014	0.663
盐浓度×硅Salinity×Si	0.000	0.000	0.207	0.000	0.201	0.032	0.000	0.000	0.047	0.002	0.000	0.000	0.006
品种×盐浓度×硅Cultivar×salinity×Si	0.034	0.003	0.146	0.049	0.472	0.260	0.807	0.090	0.559	0.002	0.129	0.316	0.544

品种Cultivars	盐浓度Salinity （mmol·L^-1）	硅处理Si	SDW （g·20 plant^-1）	RDW （g·20 plant^-1）
XD	0	+Si	0.73±0.12b	0.31±0.04a
	0	-Si	0.77±0.12b	0.27±0.02b
	50	+Si	0.48±0.03c	0.14±0.01c
	50	-Si	0.38±0.09d	0.09±0.05def
	100	+Si	0.28±0.01ef	0.09±0.01de
	100	-Si	0.25±0.02fg	0.05±0.03fg
	150	+Si	0.23±0.01fgh	0.06±0.01defg
	150	-Si	0.20±0.03fghi	0.05±0.01g
	200	+Si	0.12±0.07ijk	0.03±0.00g
	200	-Si	0.18±0.02ghij	0.06±0.01efg
	250	+Si	0.09±0.00jk	0.03±0.00g
	250	-Si	0.17±0.01ghij	0.05±0.01efg
K31	0	+Si	0.73±0.05b	0.29±0.03a
	0	-Si	0.89±0.03a	0.24±0.02b
	50	+Si	0.48±0.04c	0.16±0.02c
	50	-Si	0.48±0.10c	0.10±0.01d
	100	+Si	0.39±0.01cd	0.14±0.01c
	100	-Si	0.36±0.05de	0.09±0.00def
	150	+Si	0.25±0.05fg	0.10±0.01d
	150	-Si	0.19±0.03fghij	0.09±0.01def
	200	+Si	0.09±0.00jk	0.04±0.01g
	200	-Si	0.17±0.01hijk	0.05±0.01efg
	250	+Si	0.07±0.01k	0.04±0.01g
	250	-Si	0.14±0.01ijk	0.06±0.01efg

品种Cultivars	盐浓度Salinity （mmol·L^-1）	硅处理Si	SDW （g·20 plant^-1）	RDW （g·20 plant^-1）
XD	0	+Si	0.73±0.12b	0.31±0.04a
	0	-Si	0.77±0.12b	0.27±0.02b
	50	+Si	0.48±0.03c	0.14±0.01c
	50	-Si	0.38±0.09d	0.09±0.05def
	100	+Si	0.28±0.01ef	0.09±0.01de
	100	-Si	0.25±0.02fg	0.05±0.03fg
	150	+Si	0.23±0.01fgh	0.06±0.01defg
	150	-Si	0.20±0.03fghi	0.05±0.01g
	200	+Si	0.12±0.07ijk	0.03±0.00g
	200	-Si	0.18±0.02ghij	0.06±0.01efg
	250	+Si	0.09±0.00jk	0.03±0.00g
	250	-Si	0.17±0.01ghij	0.05±0.01efg
K31	0	+Si	0.73±0.05b	0.29±0.03a
	0	-Si	0.89±0.03a	0.24±0.02b
	50	+Si	0.48±0.04c	0.16±0.02c
	50	-Si	0.48±0.10c	0.10±0.01d
	100	+Si	0.39±0.01cd	0.14±0.01c
	100	-Si	0.36±0.05de	0.09±0.00def
	150	+Si	0.25±0.05fg	0.10±0.01d
	150	-Si	0.19±0.03fghij	0.09±0.01def
	200	+Si	0.09±0.00jk	0.04±0.01g
	200	-Si	0.17±0.01hijk	0.05±0.01efg
	250	+Si	0.07±0.01k	0.04±0.01g
	250	-Si	0.14±0.01ijk	0.06±0.01efg

品种Cultivars	盐浓度Salinity （mmol·L^-1）	硅处理Si	氮N	磷P	钾K⁺	钠Na⁺
XD	0	+Si	3.27±0.23a	0.42±0.01b	4.70±0.05c	0.94±0.07j
	0	-Si	3.15±0.01ab	0.42±0.02bc	4.78±0.10c	0.82±0.01k
	50	+Si	3.11±0.09abc	0.41±0.01bc	3.92±0.11e	0.92±0.01j
	50	-Si	2.85±0.03d	0.39±0.01cd	3.52±0.06fgh	1.08±0.01i
	100	+Si	3.13±0.11abc	0.37±0.00d	3.75±0.14ef	1.11±0.03hi
	100	-Si	2.80±0.02de	0.30±0.01f	3.20±0.18hijk	1.35±0.01e
	150	+Si	2.93±0.12bcd	0.31±0.01f	3.46±0.04fgh	1.25±0.02f
	150	-Si	2.54±0.04fgh	0.24±0.01ghi	3.02±0.10jk	1.57±0.01c
	200	+Si	2.53±0.01fghi	0.26±0.02gh	2.98±0.08k	1.46±0.01d
	200	-Si	2.44±0.07ghij	0.24±0.01hi	2.56±0.04l	1.60±0.01c
	250	+Si	2.22±0.05jkl	0.20±0.01jk	2.06±0.06m	1.60±0.01c
	250	-Si	2.28±0.03ijkl	0.20±0.01k	1.99±0.10m	1.62±0.03c
K31	0	+Si	2.76±0.06def	0.46±0.02a	5.62±0.31a	0.84±0.03k
	0	-Si	2.85±0.06d	0.46±0.00a	5.30±0.06ab	0.80±0.00k
	50	+Si	2.89±0.07cd	0.39±0.01cd	5.19±0.21b	0.94±0.00j
	50	-Si	2.67±0.03defg	0.33±0.04ef	4.76±0.02c	1.24±0.03fg
	100	+Si	2.79±0.04de	0.34±0.01e	4.72±0.12c	1.17±0.02gh
	100	-Si	2.49±0.02ghi	0.30±0.01f	4.31±0.03d	1.44±0.01d
	150	+Si	2.57±0.03efgh	0.27±0.01g	4.28±0.05d	1.32±0.02e
	150	-Si	2.33±0.04hijkl	0.23±0.01hi	3.92±0.06e	1.64±0.01c
	200	+Si	2.39±0.05hijk	0.24±0.01hi	3.61±0.05efg	1.58±0.02c
	200	-Si	2.17±0.03kl	0.22±0.01ijk	3.34±0.04hijk	1.78±0.01b
	250	+Si	2.14±0.10lm	0.22±0.01ijk	3.39±0.07ghi	1.88±0.01a
	250	-Si	1.93±0.03m	0.23±0.03ij	3.10±0.14ijk	1.91±0.01a